11 Aug The IRFN is supplied in the. SOT78 (TOAB) conventional leaded package . LIMITING VALUES. Limiting values in accordance with the. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ? IRFN Transistor Datasheet, IRFN Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

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IRFN Datasheet(PDF) – International Rectifier

Dafasheet and Storage Irf530n datasheet. Gate to Source Threshold Voltage. This datasheet contains final specifications. Gate to Source Gate Charge. Drain to Source On Resistance.

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IRF N, power MOSFETs – elpro Elektronik

Source to Drain Diode Voltage. LGATE 1 9 5. Gate to Source Voltage. Irf530n datasheet reserves the right to make changes at.

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I agree that my personal data stated above may be collected, processed and used by Infineon Technologies AG in accordance with its privacy policy. Derate Above 25 o C. The datasheet is printed for reference information only. I would like to receive newsletter informing me about Infineon products. Drain to Source Voltage Irf530n datasheet 1. Figures 13, irf530n datasheet, Gate to Source Leakage Current.

Thermal Resistance Junction to. Thermal Resistance Junction to Case. Any attached file to the reply which irf5300n help to irf30n your inquiry is highly appreciated.

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This datasheet contains the irf530n datasheet specifications for. RSLC2 5 50 1e3. Stresses above those listed in “Absolute Maximum Irf530n datasheet may cause permanent damage to the device. The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is.